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V-I Characterization and Modelling of GaN HEMT

EasyChair Preprint no. 3589

7 pagesDate: June 10, 2020


This paper proposes the study of warmness consequences on Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs). The output and transfer features are observed at warmness varying from 5°C to 105°C. The warmness dependence on static factors of GaN HEMT is observed, as like: drain power (IDS), Drain Source Potential difference (VDS).Gallium Nitrite (GaN)High-Electron-Mobility Transistor (HEMT) models is required to prevent simulation problems and artifacts in the prediction. The experimentally recorded I–V parameters and this permits to calculate the intensities of block exists in the GaN buffer.

Keyphrases: GAN, HEMT, High Electron Mobility Transistor, mechanism, modelling, of, physical, semiconductor, semiconductor equipment modelling

BibTeX entry
BibTeX does not have the right entry for preprints. This is a hack for producing the correct reference:
  author = {P. S. Arthy and A. Kavitha and S. Manjula},
  title = {V-I Characterization and Modelling of GaN HEMT},
  howpublished = {EasyChair Preprint no. 3589},

  year = {EasyChair, 2020}}
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